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Ti:sapphire(Ti:Al2O3)
Ti:sapphire(Ti:Al2O3) Titanium-doped sapphire (Ti:Sapphire) is widely used in lasers with high output power, high gain, wide-band tunable and ultrashort-wave pulses. It has characteristics such as low light scattering and ..
Product description

Titanium-doped sapphire (Ti:Sapphire) is widely used in lasers with high output power, high gain, wide-band tunable and ultrashort-wave pulses. It has characteristics such as low light scattering and low dislocation density (less than 102/cm²). The Ti:Sapphire crystal grown by the temperature gradient method is grown with the (0001) orientation as the characteristic, and also has a high doping concentration (a₄₉₀ = 7.5 cm⁻¹), high gain and high laser damage threshold.

Main Applications:

      The titanium-doped sapphire crystal (Ti:Sapphire) is widely used in high-output-power, high-gain, wide-band tunable ultrashort-wave pulse lasers. Zhongce Company has an advanced Temperature Gradient (TGT) growth method and can provide large-sized (diameter 120×80 mm²) high-quality Ti:Sapphire crystals, which have characteristics such as low light scattering and low dislocation density (< 102 cm⁻²). The Ti:Sapphire crystal grown by the temperature gradient method is grown along the [0001] crystal orientation, and at the same time, it has a high doping concentration (α490 = 4.0 cm⁻¹), high gain and high laser damage threshold.

Main Applications:

  • The tunable wavelength covers the range of 700-1000 nm, enabling Ti:Sapphire to replace dye lasers in many applications.
  • Using ultra-thin non-critical phase-matching crystals such as BBO as frequency doubling devices, Ti:Sapphire can generate ultrashort pulse ultraviolet to deep ultraviolet (up to 193 nm) lasers with a duration of less than 10 fs.
  • Ti:Sapphire is also widely used as a pump source for optical parametric oscillation to expand its tunable range.
 
Molecular Formula
Ti³⁺:Al₂O₃
Crystal Structure
Hexagonal Crystal System
Lattice Constant
a = 4.758 Å, c = 12.991 Å
Density
3.98 g/cm³
Melting Point
2040 ℃
Mohs Hardness
9 Mohs
Thermal Conductivity
52 W/m/k
Specific Heat
0.42 J/g/K
Laser Generation
Four Energy Levels
Fluorescence Lifetime
3.2 μs (T = 300 K)
Tuning Range
660-1050 nm
Absorption Range
400-600 nm
Emission Peak
795 nm
Absorption Peak
488 nm
Refractive Index
1.76 @ 800 nm
Peak Cross-Section
3~4×10⁻¹⁹ cm²
Coefficient of Thermal Expansion
8.40×10⁻⁶ /℃
 

Specifications of Titanium-doped Sapphire Crystal:

 
Orientation The C-axis is the optical axis direction, and the optical axis direction is perpendicular to the crystal surface.
Concentration of Ti₂O₃ 0.06-0.26 at.%
Quality Factor 100~250 units (Products with a value greater than 250 can be customized)
α490 1.0-4.0 cm⁻¹
Diameter 2~30 mm (Can be customized)
Optical Path 2~30 mm (Can be customized)
End Face Double parallel planes or Brewster cut at both ends
Surface Finish 40/20, Refer to MIL-PRF-13830B standard
Flatness ≤λ/8 @ 633 nm
Transmission Wavefront Distortion ≤λ/4 @ 633 nm
Parallelism 20"
Perpendicularity ≤ 15'
Customized coating system services are available.  
 

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